7th International Conference On The Physics Of Semiconductors

The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.

The conference covered the current and future direction for research in the area of physics of semiconductors, such as growth, sufaces, and interfaces, defects and impurities, wide-band-gap semiconductors, molecular systems, and organic semiconductors, and others.

This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.

The 23rd ICPS continues the tradition of the preceding conferences. Advances in bulk semiconductors and defect and impurity related problems are reviewed. A key role is played by semiconductor structures with reduced dimensionality, as heterostructures, superlattices, quantum wires, and dots. Special emphasis is given to growth-related problems, and new semiconducting materials (inorganic as well as organic) and novel devices will be highlighted. The proceedings provide an exhaustive overview on the most recent achievements in semiconductor physics.