Crystal Growth From Fundamentals To Technology

The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.

The intrinsic properties of a solid, i. e. , the properties that result from its specific structure, can be largely modified by crystallographic and chem ical defects. The formation of these defects is governed by the heat and mass transfer conditions which prevail on and near a crystal-nutrient in terface during crystallization. Hence, both the growth of highly perfect crystals and the preparation of samples having predetermined defect-induced (extrinsic) properties require a thorough understanding of the reaction and transport mechanisms that govern crystallization from vapors, solutions and melts. Crystal growth, as a science, is therefore mostly concerned with the chemistry and physics of heat and mass transport in these fluid-solid phase transitions. Solid-solid transitions are, at this time, not widely employed for high quality single-crystal production. Transport concepts are largely built upon equilibrium considerations, i. e. , on thermodynamic and phase equilibrium concepts. Hence to supply a "workable" foundation for the succeeding discussions, this text begins in Chapter 2 with a concise treatment of thermodynamics which emphasizes applications to mate rials preparation. After working through this chapter, the reader should feel at ease with often (particularly among physicists) unfamiliar entities such as chemical potentials, fugacities, activities. etc. Special sections on ther mochemical calculations (and their pitfalls) and compilations of thermochemi cal data conclude the second chapter. Crystal growth can be called. in a wide sense, the science and technology of controlling phase transitions that lead to (single crystalline) solids.

In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.

Crystal growth technology involves processes for the production of crystals essential for microelectronics, communication technologies, lasers and energy producing and energy saving technology. A deliberately added impurity is called an additive and in different industries these affect the process of crystal growth. Thus, understanding of interactions between additives and the crystallizing phases is important in different processes found in the lab, nature and in various industries. This book presents a generalized description of the mechanisms of action of additives during nucleation, growth and aggregation of crystals during crystallization and has received endorsement from the President of the International Organization for Crystal Growth. It is the first text devoted to the role of additives in different crystallization processes encountered in the lab, nature and in industries as diverse as pharmaceuticals, food and biofuels. A unique highlight of the book are chapters on the effect of additives on crystal growth processes, since the phenomena discussed is an issue of debate between researchers

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.