Defects In Semiconductors Icds 19
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Defects in Semiconductors ICDS 19
Author | : Gordon Davies |
Publsiher | : Unknown |
Total Pages | : 726 |
Release | : 1997 |
Genre | : Materials |
ISBN | : UVA:X006051148 |
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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.
Defects in Semiconductors 19
Author | : Gordon Davies,Maria Helena Nazaré |
Publsiher | : Trans Tech Publications Ltd |
Total Pages | : 1932 |
Release | : 1997-12-11 |
Genre | : Technology & Engineering |
ISBN | : 9783035705249 |
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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Defects in Semiconductors ICDS 19
Author | : Anonim |
Publsiher | : Unknown |
Total Pages | : 604 |
Release | : 1997 |
Genre | : Semiconductors |
ISBN | : UOM:39015040323126 |
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Proceedings of the 17th International Conference on Defects in Semiconductors
Author | : Helmut Heinrich,Wolfgang Jantsch |
Publsiher | : Unknown |
Total Pages | : 444 |
Release | : 1994 |
Genre | : Semiconductors |
ISBN | : UVA:X002410136 |
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Proceedings of the 18th International Conference on Defects in Semiconductors
Author | : Masashi Suezawa |
Publsiher | : Unknown |
Total Pages | : 660 |
Release | : 1995 |
Genre | : Semiconductors |
ISBN | : UVA:X002569566 |
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Defects in Semiconductors Icds 18
Author | : M. Suezawa,H. Katayama-Yoshida |
Publsiher | : Trans Tech Publications |
Total Pages | : 608 |
Release | : 1996 |
Genre | : Science |
ISBN | : UVA:X002569565 |
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The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Hydrogen in Semiconductors II
Author | : Anonim |
Publsiher | : Academic Press |
Total Pages | : 541 |
Release | : 1999-05-05 |
Genre | : Science |
ISBN | : 9780080525259 |
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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Defects in Semiconductors
Author | : Gordon Davies,Maria Helena Nazaré |
Publsiher | : Scitec Publications |
Total Pages | : 644 |
Release | : 1997 |
Genre | : Science |
ISBN | : UVA:X006051149 |
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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.