Defects in Semiconductors ICDS 19

Defects in Semiconductors  ICDS 19
Author: Gordon Davies
Publsiher: Unknown
Total Pages: 726
Release: 1997
Genre: Materials
ISBN: UVA:X006051148

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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.

Defects in Semiconductors ICDS 19

Defects in Semiconductors  ICDS 19
Author: Anonim
Publsiher: Unknown
Total Pages: 604
Release: 1997
Genre: Semiconductors
ISBN: UOM:39015040323126

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Defects in Semiconductors 19

Defects in Semiconductors 19
Author: Gordon Davies,Maria Helena Nazaré
Publsiher: Trans Tech Publications Ltd
Total Pages: 1932
Release: 1997-12-11
Genre: Technology & Engineering
ISBN: 9783035705249

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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).

Proceedings of the 18th International Conference on Defects in Semiconductors

Proceedings of the 18th International Conference on Defects in Semiconductors
Author: Masashi Suezawa,Hiroshi Katayama-Yoshida
Publsiher: Unknown
Total Pages: 666
Release: 1995
Genre: Semiconductors
ISBN: UOM:39015035263261

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Hydrogen in Semiconductors II

Hydrogen in Semiconductors II
Author: Anonim
Publsiher: Academic Press
Total Pages: 541
Release: 1999-05-05
Genre: Science
ISBN: 9780080525259

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference

Defects in Semiconductors

Defects in Semiconductors
Author: Gordon Davies,Maria Helena Nazaré
Publsiher: Scitec Publications
Total Pages: 644
Release: 1997
Genre: Semiconductors
ISBN: UVA:X006051149

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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.

Microprobe Characterization of Optoelectronic Materials

Microprobe Characterization of Optoelectronic Materials
Author: Juan Jimenez
Publsiher: CRC Press
Total Pages: 734
Release: 2002-11-15
Genre: Technology & Engineering
ISBN: 1560329416

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Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.

International Conference on Defects in Semiconductors 2013

International Conference on Defects in Semiconductors 2013
Author: American Institute of Physics
Publsiher: Unknown
Total Pages: 135
Release: 2014
Genre: Ge semiconductor detectors
ISBN: 0735412154

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