Electrochemical Processes In Ulsi And Mems

The papers in this issue describe the latest advances in fundamental and practical aspects of electrochemical processes for fabrication of microelectronic devices and related structures. Topics range from plating to etching, chips to packages, mechanisms to models, through-silicon vias to nanotubes, tin to ruthenium, capping to cooling, porous gold to porous alumina, probe-card springs to solder balls, electroless deposition to CMP, TFT-LCDs to magnetic nanowires and beyond.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Electrochemical Processing in ULSI and MEMS 4¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, CA from May 24 to 29, 2009.

The definitive resource for electroplating, now completely up to date With advances in information-age technologies, the field of electroplating has seen dramatic growth in the decade since the previous edition of Modern Electroplating was published. This expanded new edition addresses these developments, providing a comprehensive, one-stop reference to the latest methods and applications of electroplating of metals, alloys, semiconductors, and conductive polymers. With special emphasis on electroplating and electrochemical plating in nanotechnologies, data storage, and medical applications, the Fifth Edition boasts vast amounts of new and revised material, unmatched in breadth and depth by any other book on the subject. It includes: Easily accessible, self-contained contributions by over thirty experts Five completely new chapters and hundreds of additional pages A cutting-edge look at applications in nanoelectronics Coverage of the formation of nanoclusters and quantum dots using scanning tunneling microscopy (STM) An important discussion of the physical properties of metal thin films Chapters devoted to methods, tools, control, and environmental issues And much more A must-have for anyone in electroplating, including technicians, platers, plating researchers, and metal finishers, Modern Electroplating, Fifth Edition is also an excellent reference for electrical engineers and researchers in the automotive, data storage, and medical industries.

This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Fundamentals of Electrochemical Growth: From UPD to Microstructures ¿ Symposium in Memory of Prof. Evgeni Budevski¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.