Fundamentals Of Nanotransistors

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Complemented with online lecture by Prof Lundstrom: nanoHUB-U Nanoscale Transistor Contents:MOSFET Fundamentals:OverviewThe Transistor as a Black BoxThe MOSFET: A Barrier-Controlled DeviceMOSFET IV: Traditional ApproachMOSFET IV: The Virtual Source ModelMOS Electrostatics:Poisson Equation and the Depletion ApproximationGate Voltage and Surface PotentialMobile Charge: Bulk MOSMobile Charge: Extremely Thin SOI2D MOS ElectrostaticsThe VS Model RevisitedThe Ballistic MOSFET:The Landauer Approach to TransportThe Ballistic MOSFETThe Ballistic Injection VelocityConnecting the Ballistic and VS ModelsTransmission Theory of the MOSFET:Carrier Scattering and TransmissionTransmission Theory of the MOSFETConnecting the Transmission and VS ModelsVS Characterization of Transport in NanotransistorsLimits and Limitations Readership: Any student and professional with an undergraduate degree in the physical sciences or engineering.

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.

This book aims to serve as a practical guide for novices to design and conduct measurements of thermal properties at the nanoscale using electrothermal techniques. An outgrowth of the authors’ tutorials for new graduate students in their own labs, it includes practical details on measurement design and selection, sensitivity and uncertainty analysis, and pitfalls and verifications. The information is particularly helpful for someone setting up their own experiment for the first time. The book emphasizes the integration of thermal analysis with practical experimental considerations, in order to design an experiment for best sensitivity and to configure the laboratory instruments accordingly. The focus is on the measurements of thermal conductivity, though thermal diffusivity and thermal boundary resistance (thermal contact resistance) are also briefly covered, and many of the principles can be generalized to other challenging thermal measurements.The reader is only expected to have the basic familiarity with electrical instruments typical of a university graduate in science or engineering, and an acquaintance with the elementary laws of heat transfer by conduction, convection, and radiation.

Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat dissipation on an atomic scale which is of broad relevance to the general problems of non-equilibrium statistical mechanics that pervade many different fields.This book is based on a set of two online courses originally offered in 2012 on nanoHUB-U and more recently in 2015 on edX. In preparing the second edition the author decided to split it into parts A and B titled Basic Concepts and Quantum Transport respectively, along the lines of the two courses. A list of available video lectures corresponding to different sections of this volume is provided upfront.To make these lectures accessible to anyone in any branch of science or engineering, the author assume very little background beyond linear algebra and differential equations. However, the author will be discussing advanced concepts that should be of interest even to specialists, who are encouraged to look at his earlier books for additional technical details.

Current leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)

The book comprises select proceedings of the first International Conference on Advances in Electrical and Computer Technologies 2019 (ICAECT 2019). The papers presented in this book are peer reviewed and cover wide range of topics in Electrical and Computer Engineering fields. This book contains the papers presenting the latest developments in the areas of Electrical, Electronics, Communication systems and Computer Science such as smart grids, soft computing techniques in power systems, smart energy management systems, power electronics, feedback control systems, biomedical engineering, geo informative systems, grid computing, data mining, image and signal processing, video processing, computer vision, pattern recognition, cloud computing, pervasive computing, intelligent systems, artificial intelligence, neural network and fuzzy logic, broad band communication, mobile and optical communication, network security, VLSI, embedded systems, optical networks and wireless communication. This book will be of great use to the researchers and students in the areas of Electrical and Electronics Engineering, Communication systems and Computer Science.