Nanoscale Transistors

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

With the increasing demand for smaller, faster, and more highly integrated optical and electronic devices, as well as extremely sensitive detectors for biomedical and environmental applications, a field called nano-optics or nano-photonics/electronics is emerging – studying the many promising optical properties of nanostructures. Like nanotechnology itself, it is a rapidly evolving and changing field – but because of strong research activity in optical communication and related devices, combined with the intensive work on nanotechnology, nano-optics is shaping up fast to be a field with a promising future. This book serves as a one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments. Provides overview of the field of Nano-optics/photonics and electronics, detailing practical examples of photonic technology in a wide range of applications Discusses photonic systems and devices with mathematical rigor precise enough for design purposes A one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments.

A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Complemented with online lecture by Prof Lundstrom: nanoHUB-U Nanoscale Transistor Contents:MOSFET Fundamentals:OverviewThe Transistor as a Black BoxThe MOSFET: A Barrier-Controlled DeviceMOSFET IV: Traditional ApproachMOSFET IV: The Virtual Source ModelMOS Electrostatics:Poisson Equation and the Depletion ApproximationGate Voltage and Surface PotentialMobile Charge: Bulk MOSMobile Charge: Extremely Thin SOI2D MOS ElectrostaticsThe VS Model RevisitedThe Ballistic MOSFET:The Landauer Approach to TransportThe Ballistic MOSFETThe Ballistic Injection VelocityConnecting the Ballistic and VS ModelsTransmission Theory of the MOSFET:Carrier Scattering and TransmissionTransmission Theory of the MOSFETConnecting the Transmission and VS ModelsVS Characterization of Transport in NanotransistorsLimits and Limitations Readership: Any student and professional with an undergraduate degree in the physical sciences or engineering.

Nanoscale devices differ from larger microscale devices because they depend on the physical phenomena and effects that are central to their operation. This textbook illuminates the behavior of nanoscale devices by connecting them to the electronic, as well as magnetic, optical and mechanical properties, which fundamentally affect nanoscale devices in fascinating ways. Their small size means that an understanding of the phenomena measured is even more important, as their effects are so dominant and the changes in scale of underlying energetics and response are significant. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the interactions, and others. These interactions, with the limits on size, make their physical behavior interesting, important and useful. The collection of four textbooks in the Electroscience Series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.

From the reviews: "...A class in nanoscale science and technology is daunting for the educator, who must organize a large collection of materials to cover the field, and for the student, who must absorb all the new concepts. This textbook is an excellent resource that allows students from any engineering background to quickly understand the foundations and exciting advances of the field. The example problems with answers and the long list of references in each chapter are a big plus for course tutors. The book is organized into seven sections. The first, nanoscale fabrication and characterization, covers nanolithography, self-assembly, and scanning probe microscopy. Of these, we enjoyed the section on nanolithography most, as it includes many interesting details from industrial manufacturing processes. The chapter on self-assembly also provides an excellent overview by introducing six types of intermolecular interactions and the ways these can be employed to fabricate nanostructures. The second section covers nanomaterials and nanostructures. Out of its 110 pages, 45 are devoted to carbon nanotubes. Fullerenes and quantum dots each have their own chapter that focuses on the properties and applications of these nanostructures. Nanolayer, nanowire, and nanoparticle composites of metals and semiconductors are briefly covered (just 12 pages), with slightly more discussion of specific applications. The section on nanoscale electronics begins with a history of microelectronics before discussing the difficulties in shrinking transistor size further. The discussion of problems (leakage current, hot electrons, doping fluctuations, etc.) and possible solutions (high- k dielectrics, double-gate devices) could easily motivate deeper discussions of nanoscale electrical transport. A chapter on molecular electronics considers transport through alkanes, molecular transistors, and DNA in a simple, qualitative manner we found highly instructive. Nanoscale magnetic systems are examined in the fourth section. The concept of quantum computation is nicely presented, although the discussion of how this can be achieved with controlled spin states is (perhaps necessarily) not clear. We found the chapter on magnetic storage to be one of the most lucid in the book. The giant magnetoresistive effect, operation of spin valves, and issues in magnetic scaling are easier to understand when placed in the context of the modern magnetic hard disk drive. Micro- and nanoelectromechanical systems are covered with an emphasis on the integration of sensing, computation, and communication. Here, the student can see advanced applications of lithography. The sixth section, nanoscale optoelectronics, describes quantum dots, organic optoelectronics, and photonic crystals. The chapter on organic optoelectronics is especially clear in its discussion of the fundamentals of this complicated field. The book concludes with an overview of nanobiotechnology that covers biomimetics, biomolecular motors, and nanofluidics. Because so many authors have contributed to this textbook, it suffers a bit from repetition. However, this also allows sections to be omitted without any adverse effect on student comprehension. We would have liked to see more technology to balance the science; apart from the chapters on lithography and magnetic storage, little more than an acknowledgment is given to commercial applications. Overall, this book serves as an excellent starting point for the study of nanoscale science and technology, and we recommend it to anyone with a modest scientific background. It is also a great vehicle to motivate the study of science at a time when interest is waning. Nanotechnology educators should look no further." (MATERIALS TODAY, June 2005)