Low Power Cmos Digital Pixel Imagers For High Speed Uncooled Pbse Ir Applications

This book describes the development of a new low-cost medium wavelength IR (MWIR) monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapor phase deposition (VPD) PbSe-based MWIR detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. In order to fulfill the operational requirements of VPD PbSe, this work proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation.

An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.

This new up-to-date edition of the successful handbook and ready reference retains the proven concept of the first, covering basic and advanced methods and applications in infrared imaging from two leading expert authors in the field. All chapters have been completely revised and expanded and a new chapter has been added to reflect recent developments in the field and report on the progress made within the last decade. In addition there is now an even stronger focus on real-life examples, with 20% more case studies taken from science and industry. For ease of comprehension the text is backed by more than 590 images which include graphic visualizations and more than 300 infrared thermography figures. The latter include many new ones depicting, for example, spectacular views of phenomena in nature, sports, and daily life.

Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un

In today's world, the range of technologies with the potential to threaten the security of U.S. military forces is extremely broad. These include developments in explosive materials, sensors, control systems, robotics, satellite systems, and computing power, to name just a few. Such technologies have not only enhanced the capabilities of U.S. military forces, but also offer enhanced offensive capabilities to potential adversaries - either directly through the development of more sophisticated weapons, or more indirectly through opportunities for interrupting the function of defensive U.S. military systems. Passive and active electro-optical (EO) sensing technologies are prime examples. Laser Radar considers the potential of active EO technologies to create surprise; i.e., systems that use a source of visible or infrared light to interrogate a target in combination with sensitive detectors and processors to analyze the returned light. The addition of an interrogating light source to the system adds rich new phenomenologies that enable new capabilities to be explored. This report evaluates the fundamental, physical limits to active EO sensor technologies with potential military utility; identifies key technologies that may help overcome the impediments within a 5-10 year timeframe; considers the pros and cons of implementing each existing or emerging technology; and evaluates the potential uses of active EO sensing technologies, including 3D mapping and multi-discriminate laser radar technologies.

CD-ROM files contain complete text of all three print vols., as well as hyperlinks to figures, tables, etc. and between the index and the text. Also included are hyperlinks to movies, interactive 3-D models, demonstration software and other materials not contained in the print version.

This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.

"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--