Nanoscale Device Physics

The primary advanced textbook for the teaching of science and engineering of nanoscale devices as used in the semiconductor, electronics, magnetics, optics and electromechanics industry.

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book: Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices Includes rigorous mathematical derivations of the semiconductor physics Illustrates major concepts thorough discussions and various diagrams

This book collects papers on the fundamentals and applications of nanoscale devices, first presented at the NATO Advanced Research Workshop on Nanoscale Devices – Fundamentals and Applications held in Kishinev, Moldova, in September 2004. The focus is on the synthesis and characterization of nanoscale magnetic materials; fundamental physics and materials aspects of solid-state nanostructures; development of novel device concepts and design principles for nanoscale devices; and on applications in electronics with emphasis on defence against the threat of terrorism.

Nanoscale devices differ from larger microscale devices because they depend on the physical phenomena and effects that are central to their operation. This textbook illuminates the behavior of nanoscale devices by connecting them to the electronic, as well as magnetic, optical and mechanical properties, which fundamentally affect nanoscale devices in fascinating ways. Their small size means that an understanding of the phenomena measured is even more important, as their effects are so dominant and the changes in scale of underlying energetics and response are significant. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the interactions, and others. These interactions, with the limits on size, make their physical behavior interesting, important and useful. The collection of four textbooks in the Electroscience Series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.

The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.