Organic And Polymeric Materials And Devices Optical Electrical And Optoelectronic Properties Volume 725

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Rapid progress in electronic and optical molecular and polymeric materials has made them key enablers for novel photonic, electronic, and optoelectronic device applications. These applications are broad and include smart cards, flat-panel displays, light-emitting diodes, transistors, photovoltaics, photorefractivity, and optical coatings, to mention just a few. This book brings together researchers from the applied as well as the fundamental areas of materials and device fabrication to offer an interdisciplinary and international perspective on areas related to organic electronics and optoelectronics. Topics include: organic light-emitting materials - synthesis, devices, interfaces and charge transport; organic transistors - materials and devices; organic and hybrid photovoltaics - materials and devices; and organic materials - nonlinear optics, polymerization, structural aspects, hybrid materials and characterization.

This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.