Plasma Etching Processes For Interconnect Realization In Vlsi

This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions. This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Low-energy electrons are ubiquitous in nature and play an important role in natural phenomena as well as many potential and current industrial processes. Authored by 16 active researchers, this book describes the fundamental characteristics of low-energy electron–molecule interactions and their role in different fields of science and technology, including plasma processing, nanotechnology, and health care, as well as astro- and atmospheric physics and chemistry. The book is packed with illustrative examples, from both fundamental and application sides, features about 130 figures, and lists over 800 references. It may serve as an advanced graduate-level study course material where selected chapters can be used either individually or in combination as a basis to highlight and study specific aspects of low-energy electron–molecule interactions. It is also directed at researchers in the fields of plasma physics, nanotechnology, and radiation damage to biologically relevant material (such as in cancer therapy), especially those with an interest in high-energy-radiation-induced processes, from both an experimental and a theoretical point of view.

Covers quantum scattering theories, experimental and theoretical calculations and applications in a comprehensive manner.

Advances in Atomic, Molecular, and Optical Physics, Volume 66, provides a comprehensive compilation of recent developments in a field that is in a state of rapid growth as new experimental and theoretical techniques are used on many problems, both old and new. Topics covered include related applied areas, such as atmospheric science, astrophysics, surface physics, and laser physics, with timely articles written by distinguished experts that contain relevant review materials and detailed descriptions of important developments in the field. Presents the work of international experts in the field Contains comprehensive articles that compile recent developments in a field that is experiencing rapid growth, with new experimental and theoretical techniques emerging Ideal for users interested in optics, excitons, plasmas, and thermodynamics Topics covered include atmospheric science, astrophysics, surface physics, and laser physics, amongst others

Presents state-of-the-art research in microelectronic processing for very large scale integration. Emphasizing applications and techniques, this book provides considerable insight into Japan's technological effort in this important area of science. Focuses on research involving plasma deposition and dry etching. Considerable attention is devoted to MOS gate fabrication, the studies of the influence of process parameters on electrical properties, dry processing technologies, and the theory of plasma chemical reactions.