Properties And Applications Of Transistors
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Properties and Applications of Transistors
Author | : J. P. Vasseur |
Publsiher | : Elsevier |
Total Pages | : 462 |
Release | : 2016-06-06 |
Genre | : Technology & Engineering |
ISBN | : 9781483138886 |
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Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.
Properties and applications of transistors
Author | : Jean Pierre Vasseur |
Publsiher | : Unknown |
Total Pages | : 434 |
Release | : 1968 |
Genre | : Electronic Book |
ISBN | : OCLC:877324322 |
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Course Notes for EE 401 Fundamental Physical Properties of Transistors and Pulse and Switching Applications
Author | : University of Michigan. Department of Electrical Engineering |
Publsiher | : Unknown |
Total Pages | : 374 |
Release | : 1955 |
Genre | : Transistors |
ISBN | : UOM:39015006057718 |
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The Transistor
Author | : Bell Telephone Laboratories |
Publsiher | : Unknown |
Total Pages | : 806 |
Release | : 1951 |
Genre | : Transistors |
ISBN | : STANFORD:36105002739881 |
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Covers the same ground and supplements the talks given at a symposium on transistors, which was held at the Bell Telephone Laboratories during the week beginning September 17, 1951.
Advanced Field Effect Transistors
Author | : Dharmendra Singh Yadav,Shiromani Balmukund Rahi,Sukeshni Tirkey |
Publsiher | : CRC Press |
Total Pages | : 370 |
Release | : 2023-12-18 |
Genre | : Technology & Engineering |
ISBN | : 9781003816287 |
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Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Design Synthesis and Structure Property Relationship Study of Polymer Field Effect Transistors
Author | : Ting Lei |
Publsiher | : Springer |
Total Pages | : 115 |
Release | : 2015-01-05 |
Genre | : Technology & Engineering |
ISBN | : 9783662456675 |
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The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.
Major Applications of Carbon Nanotube Field Effect Transistors CNTFET
Author | : Raj, Balwinder,Khosla, Mamta,Singh, Amandeep |
Publsiher | : IGI Global |
Total Pages | : 255 |
Release | : 2019-12-06 |
Genre | : Technology & Engineering |
ISBN | : 9781799813958 |
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With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Properties of Synthetic Two Dimensional Materials and Heterostructures
Author | : Yu-Chuan Lin |
Publsiher | : Springer |
Total Pages | : 141 |
Release | : 2018-10-23 |
Genre | : Technology & Engineering |
ISBN | : 9783030003326 |
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This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.