Reliability And Radiation Effects In Compound Semiconductors

This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji)The Transforming MMIC (E J Martinez)Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.)Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.)Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford)Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.)Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston)and other papers Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits. Keywords:High Speed Electronics and Systems;Compound Semiconductor Integrated Circuits;Wireline Fiber-Optic Lightwave Transmissions;Commercial and Military Applications;Digital Technologies

To describe the true behavior of most real-world systems with sufficient accuracy, engineers have to overcome difficulties arising from their lack of knowledge about certain parts of a process or from the impossibility of characterizing it with absolute certainty. Depending on the application at hand, uncertainties in modeling and measurements can be represented in different ways. For example, bounded uncertainties can be described by intervals, affine forms or general polynomial enclosures such as Taylor models, whereas stochastic uncertainties can be characterized in the form of a distribution described, for example, by the mean value, the standard deviation and higher-order moments. The goal of this Special Volume on Modeling, Design, and Simulation of Systems with Uncertainties is to cover modern methods for dealing with the challenges presented by imprecise or unavailable information. All contributions tackle the topic from the point of view of control, state and parameter estimation, optimization and simulation. Thematically, this volume can be divided into two parts. In the first we present works highlighting the theoretic background and current research on algorithmic approaches in the field of uncertainty handling, together with their reliable software implementation. The second part is concerned with real-life application scenarios from various areas including but not limited to mechatronics, robotics, and biomedical engineering.