Science And Technology Of Integrated Ferroelectrics

The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.

The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Arauj

Electroceramic thin films hold out the promise of applications in entirely new generations of advanced microdevices that may revolutionise technology, creating multibillion dollar markets in the process. Less glamorous than the high-temperature superconductors, but probably just as important, are electrically conductive, ferroelectric, piezoelectric, pyroelectric, electro-optic, and magnetic films. The list of potential applications of films having these properties is virtually endless, but there are still some issues to be resolved before fully functioning devices reach the market. All these issues and more are discussed in Science and Technology of Electroceramic Thin Films, which provides one of the best, most up to date summaries of the field currently available.

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.

The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.

The International Symposium was organized to capture the state of our knowledge on the science and technology of interfaces. The Symposium (in honor of Dr. B. B. Rath) was held during the TMS Annual meeting, Feb 17-21, 2002 at Seattle WA. This volume captures the salient papers presented at the symposium. The symposium was sponsored by the Structural Materials Division and the Electronic, Magnetic & Photonic Materials Division of TMS and the Materials Science Critical Technology Sector of ASM International and in particular by the following committees: the Physical Metallurgy Committee (TMS), the Superconducting Materials Committee (TMS), the Titanium Committee (TMD) and the Mechanical Behavior of Materials Committee (TMS/ASM). The objective of this symposium was to present current research on advanced interface controlled materials with primary focus on advanced materials. Special attention was given to design of such interface controlled materials with their unique and highly desirable properties. The symposium was designed to assess the current status and to identify future directions of research, design and applications of the role of interfaces in nanostructured bulk solids, films and coatings as well as polycrystalline superconducting materials. Particular emphasis was placed on developing close interactions and fostering future collaborations among scientists and engineers from the USA, Western and Eastern Europe, Russia, and other Asian countries.

The book is focused on the use of functional oxide and nitride films to enlarge the application range of MEMS (microelectromechanical systems), including micro-sensors, micro-actuators, transducers, and electronic components for microwaves and optical communications systems. Applications, emerging applications, fabrication technology and functioning issues are presented and discussed. The book covers the following topics: Part A: Applications and devices with electroceramic-based MEMS: Chemical microsensors Microactuators based on thin films Micromachined ultrasonic transducers Thick-film piezoelectric and magnetostrictive devices Pyroelectric microsystems RF bulk acoustic wave resonators and filters High frequency tunable devices MEMS for optical functionality Part B: Materials, fabrication technology, and functionality: Ceramic thick films for MEMS Piezoelectric thin films for MEMS Materials and technology in thin films for tunable high frequency devices Permittivity, tunability and loss in ferroelectrics for reconfigurable high frequency electronics Microfabrication of piezoelectric MEMS Nano patterning methods for electroceramics Soft lithography emerging techniques The book is addressed to engineers, scientists and researchers of various disciplines, device engineers, materials engineers, chemists, physicists and microtechnologists who are working and/or interested in this fast growing and highly promising field. The publication of this book follows a Special Issue on electroceramic-based MEMS that was published in the Journal of Electroceramics at the beginning of 2004. The ten invited papers of that special issue were adapted by the authors into chapters of the present book and five additional chapters were added.