Shallow Impurities In Semiconductors Iv

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Shallow impurities in semiconductors, well established as the backbone of semiconductor applications in electronics, continue to play an important role in today's research. The Third International Conference on Shallow Impurities in Semiconductors was organised to critically review some of the recent and current developments, with emphasis given to certain topics. These included shallow impurities in quantum structures, silicon and germanium, thermal donors and related defects in silicon, DX centres in III-V compounds, hydrogen passivation and diffusion of shallow impurities. Shallow Impurities in Semiconductors 1988 brings together selected papers from this conference, both invited and contributed. A broad range of physical phenomena related to shallow impurities in a large number of semiconductor materials are included. These proceedings should be of wide interest, both in the physics community and in the broad engineering field of microelectronics.

The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals and also on their kinetics and transformations under annealing. After an introduction of the bulk optical properties of semiconductors and insulators and of impurities in crystals, this book presents the physical bases necessary for the understanding of impurity spectra. The description of various set-ups and accessories used in absorption spectroscopy is followed by a presentation of experimental results on specific impurities and classes of impurities and their relation with those obtained by various computation and by other experimental techniques.

The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials’ age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range of semiconductor properties or of a continually increasing number of the semiconductor device applications. Rather, the main purpose of this book is to provide an introductory perspective on the basic principles of semiconductor materials and their applications that are described in a relatively concise format in a single volume. Thus, this book should especially be suitable as an introductory text for a single course on semiconductor materials that may be taken by both undergraduate and graduate engineering students. This book should also be useful, as a concise reference on semiconductor materials, for researchers working in a wide variety of fields in physical and engineering sciences.