Shallow Impurity Centers In Semiconductors
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Shallow level Centers In Semiconductors Proceedings Of The 7th International Conference
Author | : C A J Ammerlaan,B Pajot |
Publsiher | : World Scientific |
Total Pages | : 554 |
Release | : 1997-04-19 |
Genre | : Electronic Book |
ISBN | : 9789814546676 |
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This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Shallow Impurity Centers in Semiconductors
Author | : A. Baldereschi,R. Resta |
Publsiher | : Elsevier |
Total Pages | : 315 |
Release | : 2012-12-02 |
Genre | : Technology & Engineering |
ISBN | : 9780080984599 |
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Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.
Shallow Impurity Centers in Semiconductors
Author | : A. Baldereschi,R. Resta |
Publsiher | : North Holland |
Total Pages | : 305 |
Release | : 1987 |
Genre | : Impurity centers |
ISBN | : 0444870873 |
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Fundamentals of Semiconductors
Author | : Peter YU,Manuel Cardona |
Publsiher | : Springer Science & Business Media |
Total Pages | : 778 |
Release | : 2010-04-07 |
Genre | : Technology & Engineering |
ISBN | : 9783642007101 |
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Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Deep Impurities in Semiconductors
Author | : Arthur George Milnes |
Publsiher | : Wiley-Interscience |
Total Pages | : 552 |
Release | : 1973 |
Genre | : Science |
ISBN | : UOM:39015028297268 |
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Deep Centers in Semiconductors
Author | : Sokrates T. Pantelides |
Publsiher | : CRC Press |
Total Pages | : 952 |
Release | : 1992-11-30 |
Genre | : Science |
ISBN | : 2881245625 |
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Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Shallow Impurities in Semiconductors V
Author | : Tsunemasa Taguchi |
Publsiher | : Trans Tech Publications Ltd |
Total Pages | : 540 |
Release | : 1993-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9783035704723 |
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The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.
Best of Soviet Semiconductor Physics and Technology
Author | : Mikhail Levinshtein,Michael Shur |
Publsiher | : Springer Science & Business Media |
Total Pages | : 392 |
Release | : 1991-02 |
Genre | : Science |
ISBN | : 0883187833 |
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Culled from the thousands of papers published in American Institute of