Transition Metal Impurities In Semiconductors
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Transition Metal Impurities in Semiconductors
Author | : Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ,Viktor Ilʹich Fistulʹ |
Publsiher | : CRC Press |
Total Pages | : 262 |
Release | : 1986 |
Genre | : Doped semiconductors |
ISBN | : UCAL:B4128412 |
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The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Transition Metal Impurities In Semiconductors
Author | : Victor N Fleurov,K A Kikoin |
Publsiher | : World Scientific |
Total Pages | : 361 |
Release | : 1994-08-31 |
Genre | : Science |
ISBN | : 9789814501606 |
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This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Metal Impurities in Silicon Device Fabrication
Author | : Klaus Graff |
Publsiher | : Springer Science & Business Media |
Total Pages | : 228 |
Release | : 2013-03-08 |
Genre | : Technology & Engineering |
ISBN | : 9783642975936 |
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A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Metal Impurities in Silicon and Germanium Based Technologies
Author | : Cor Claeys,Eddy Simoen |
Publsiher | : Springer |
Total Pages | : 438 |
Release | : 2018-08-13 |
Genre | : Technology & Engineering |
ISBN | : 9783319939254 |
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This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Transition Metal Impurities in Semiconductors
Author | : Stanford University. Stanford Electronics Laboratories |
Publsiher | : Unknown |
Total Pages | : 74 |
Release | : 1967 |
Genre | : Electronic Book |
ISBN | : STANFORD:36105046376708 |
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The Multiplet Problem of 3d Transition Metal Impurities in Semiconductors
Author | : Jörg Dreyhsig |
Publsiher | : Unknown |
Total Pages | : 333 |
Release | : 1994 |
Genre | : Cobalt |
ISBN | : 3928943162 |
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Transition Metal Impurities in Semiconductors
Author | : K. A. Kikoin,Viktor Nikolaevich Flrov |
Publsiher | : World Scientific |
Total Pages | : 368 |
Release | : 1994 |
Genre | : Technology & Engineering |
ISBN | : 9810218834 |
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This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Metal Impurities in Silicon and Germanium based Technologies
Author | : Cor L. Claeys,Eddy Simoen |
Publsiher | : Unknown |
Total Pages | : 135 |
Release | : 2018 |
Genre | : Metals |
ISBN | : 3319939262 |
Download Metal Impurities in Silicon and Germanium based Technologies Book in PDF, Epub and Kindle
This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.