Group Iv Semiconductor Nanostructures 2006

This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

Tutorial lectures given by world-renowned researchers have become one of the important traditions of the Nano and Giga Challenges (NGC) conference series. 1 Soon after preparations had begun for the rst forum, NGC2002, in Moscow, Russia, the organizers realized that publication of the lectures notes would be a va- able legacy of the meeting and a signi cant educational resource and knowledge base for students, young researchers, and senior experts. Our rst book was p- lished by Elsevier and received the same title as the meeting itself—Nano and Giga 2 Challenges in Microelectronics. Our second book, Nanotechnology for Electronic 3 4 Materials and Devices, based on the tutorial lectures at NGC2004 in Krakow, 5 Poland, the third book from NGC2007 in Phoenix, Arizona, and the current book 6 from joint NGC2009 and CSTC2009 meeting in Hamilton, Ontario, have been published in Springer’s Nanostructure Science and Technology series. Hosted by McMaster University, the meeting NGC/CSTC 2009 was held as a joint event of two conference series, Nano and Giga Challenges (Nano & Giga Forum) and Canadian Semiconductor Technology Conferences (CSTC), bringing together the networks and expertise of both professional forums. Informational (electronics and photonics), renewable energy (solar systems, fuel cells, and batteries), and sensor (nano and bio) technologies have reached a new stage in their development in terms of engineering limits to cost-effective impro- ment of current technological approaches. The latest miniaturization of electronic devices is approaching atomic dimensions.

Topics covered during the Professor W.M. Yen Memorial Symposium included; 1) identification of luminescent centers, loss centers and non-radiative processes, 2) synthesis and characterization of novel phosphor materials, 3) persistent phosphor materials, 4) high energy (x-ray, gamma ray, cathode ray) excitation of luminescence, including scintillators, 5) electroluminescence, 6) luminescence from glasses, 7) theoretical analysis of luminescence phenomena, and 8) synthesis and characterization of luminescent nanoparticles.