International Conference On Defects In Semiconductors 2013

Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.

Materials Science Forum Vols. 38-41