Scaling And Integration Of High Speed Electronics And Optomechanical Systems

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems. Contents: PrefaceScaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)Author Index Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.

In this volume, we have put together papers spanning a broad range — from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include:In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics. In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

This unique compendium consists of peer-reviewed articles spanning from novel growth of materials for nanoelectronic and nanophotonic devices, electronic nose sensor array, bio-nano-systems, artificial intelligence/machine learning, and emerging technologies, to applications in each of these fields.Systems implementing additively manufactured RF devices for communication, packaging, remote sensing, compact multi-bit FETs and memories are also included.Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices. Quantum dot-based devices are discussed with regard to optical logic gates, mid-infrared photodetectors, gain and index tailored external cavity high power lasers.Contributed by eminent researchers, this useful reference text broadly illustrates relevant aspects of high-performance materials and emerging nanodevices for implementing high-speed electronic systems.

This unique edited compendium consists of peer-reviewed articles focusing on 2D materials-based nanoelectronics to nanophotonic devices for biosensors and bio-nano-systems.Wide-ranging topics span from novel systems for implementing data with security tokens, single chemical sensor for multi-analyte mixture detection, additively manufactured RF devices for communication, packaging, remote sensing, to energy harvesting applications.Quantum dot-based devices featuring optical modulators and mid-infrared photodetectors in the form of Ferroelectric and quantum dot non-volatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications are also included.Contributed by eminent researchers, recent coverage of materials science for high-speed electronics, nanoelectronics based on ferroelectric and van der Waals materials, material synthesis, modeling of dislocations behavior in various heterostructures, Ultrahigh-Q on-chip SiGe microresonators for quantum transduction in new trend in computing are also prominently discussed.

Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.

This volume on Nanotechnology in Electronics, Photonics, Biosensors, and Emerging Technologies comprises research papers spanning from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields. These include blockchain improving security; ultra-sensitive Point of Care biosensor for detecting pathogeneses and detection of RNA-Virus infections; and advanced materials and devices such as ROM for anti-reverse engineering, FPGA bit-stream encryption, switching transients in memristors, and high-speed multi-bit logic and memories. Applications such as 3D-4D inkjet-printed wireless ultra-broadband modules for IOT, smarttag, and smart city applications are also included. In the area of material synthesis, carbon nanotube synthesis, III-nitride film growth via plasma-enhanced atomic layer deposition are noted. Threading dislocation behavior in InGaAs/GaAs (001) superlattice buffer layers brings a novel approach.Papers presented in this volume cover various aspects of high performance materials and devices for implementing high-speed electronic systems. This volume will serve as a useful reference for recent developments in nanotechnology.

'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.