Shallow Impurities In Semiconductors V

The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

Shallow impurities in semiconductors, well established as the backbone of semiconductor applications in electronics, continue to play an important role in today's research. The Third International Conference on Shallow Impurities in Semiconductors was organised to critically review some of the recent and current developments, with emphasis given to certain topics. These included shallow impurities in quantum structures, silicon and germanium, thermal donors and related defects in silicon, DX centres in III-V compounds, hydrogen passivation and diffusion of shallow impurities. Shallow Impurities in Semiconductors 1988 brings together selected papers from this conference, both invited and contributed. A broad range of physical phenomena related to shallow impurities in a large number of semiconductor materials are included. These proceedings should be of wide interest, both in the physics community and in the broad engineering field of microelectronics.

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu