Silicon Germanium Sige Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

An understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction in semiconductor nanostructures, including photon statistics and photoluminescence, is the focus of part three, whilst part four explores all-solid-state quantum optics, crystal nanobeam cavities and quantum-dot microcavity systems. Finally, part five investigates ultrafast phenomena, including femtosecond quantum optics and coherent optoelectronics with quantum dots. With its distinguished editor and international team of expert contributors, Quantum optics with semiconductor nanostructures is an essential guide for all those involved with the research, development, manufacture and use of semiconductors nanodevices, lasers and optical components, as well as scientists, researchers and students. A key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics Chapters provide a comprehensive overview of single quantum dot systems, nanolasers with quantum dot emitters, and light-matter interaction in semiconductor nanostructures Explores all-solid-state quantum optics, crystal nanobeam cavities and quantum-dot microcavity systems, and investigates ultrafast phenomena

The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.