Thin Films Heteroepitaxial Systems

Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-Tc superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II–VI and IV–VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics. Contents: Atomic Interactions and Surface Processes in Heteroepitaxy (J A Venables)Ordering in III–V Semiconductor Alloys (G B Stringfellow)Transition Metal Thin Film Epitaxy (G R Harp)The Growth and Structure of Epitaxial Metal-Oxide/Metal Interfaces (C A Ventrice, Jr. & H Geisler)Heteroepitaxy of Disparate Materials: From Chemisorption to Epitaxy in CaF2/Si(111) (M A Olmstead)Recent Progress in High Tc Superconducting Heterostructures (J Z Wu & S C Tidrow)Strain Accommodation and Relief in GeSi/Si Heteroepitaxy (R Hull & E A Stach)Heteroepitaxial Growth Modes and Morphologies on GaAs Surfaces (B A Joyce & D D Vvedensky)Molecular Beam Epitaxy of Sb-Based Semiconductors (B R Bennett & B V Shanabrook)P-Based Semiconductor Multilayers (M Razeghi)MBE Growth of Wide-Gap Refractory Nitride Epitaxial Films (R J Hauenstein)Epitaxial Growth, Microstructural Characterizations, and Optical Physics of Wide Bandgap II–VI Heterostructures (J Han et al.)Molecular Beam Epitaxy of Narrowgap IV–VI Semiconductors (G Springholz et al.) Readership: Graduate students and professionals who work with or want to work with heteroepitaxial systems. Keywords:Thin Films;Heteroepitaxy;Heterostructures;Heterointerface;III-V Semiconductors;Sb-Based Semiconductors;P-Based Semiconductors;Wide-Gap Refractory Nitrides;Wide-Gap II-VI Semiconductors;Narrow-Gap IV-VI Semiconductors;Transition Metal Thin Films;Epitaxial Metal-Oxide Interface;Epitaxial Fluorides on Si;High Tc Superconductor Heterostructures;Gesi/Si Heteroepitaxy;Strain Relief Mechanisms;Surface Processes;Heterepitaxial Growth Modes;Semiconductor Alloys;Alloy Ordering;Insulators

Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.

This book covers the experimental and theoretical understanding of surface and thin film processes. It presents a unique description of surface processes in adsorption and crystal growth, including bonding in metals and semiconductors. Emphasis is placed on the strong link between science and technology in the description of, and research for, new devices based on thin film and surface science. Practical experimental design, sample preparation and analytical techniques are covered, including detailed discussions of Auger electron spectroscopy and microscopy. Thermodynamic and kinetic models of structure are emphasised throughout. The book provides extensive leads into practical and research literature, as well as resources on the World Wide Web (see http://venables.asu.edu/book). Each chapter contains problems which aim to develop awareness of the subject and the methods used. Aimed as a graduate textbook, this book will also be useful as a sourcebook for graduate students, researchers and practitioners in physics, chemistry, materials science and engineering.

Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.