Frontiers In Electronics Proceedings Of The Workshop On Frontiers In Electronics 2009

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics. Contents:Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission (S Albert, A Bengoechea-Encabo, M A Sanchez-García, F Barbagini, E Calleja, E Luna, A Trampert, U Jahn, P Lefebvre, L L López, S Estradé, J M Rebled, F Peiró, G Nataf, P de Mierry and J Zuñiga-Pérez)Catalyst-Free GaN Nanowires as Nanoscale Light Emitters (K Bertness, N Sanford, J Schlager, A Roshko, T Harvey, P Blanchard, M Brubaker, A Herrero and A Sanders)Recessed-Gate Normally-Off GaN MOSFET Technologies (K-S Im, K-W Kim, D-S Kim, H-S Kang, D-K Kim, S-J Chang, Y-H Bae, S-H Hahm, S Cristoloveanu and J-H Lee)Silicon-on-Insulator MESFETs at the 45nm Node (W Lepkowski, S J Wilk, M R Ghajar, A Parsi and T J Thornton)Advanced Concepts for Floating-Body Memories (F Gámiz, N Rodriguez and S Cristoloveanu)Plasmonic-Based Devices for Optical Communications (D K Mynbaev and V Sukharenko)Spintronic Devices and Circuits for Low-Voltage Logic (D H Morris, D M Bromberg, J-G (Jimmy) Zhu and L Pileggi)Biomolecular Field Effect Sensors (bioFETs): From Qualitative Sensing to Multiplexing, Calibration and Quantitative Detection from Whole Blood (A Vacic and M A Reed)Theoretical Investigation of Intraband, Infrared Absorbance in Inorganic/Organic Nanocomposite Thin Films with Varying Colloidal Quantum Dot Surface Ligand Materials (K R Lantz and A D Stiff-Roberts) Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields. Keywords:Workshops on Frontiers in Electronics — WOFE;Microelectronics;Nanoelectronics;OptoelectronicsKey Features:Workshop in Frontiers of Electronics (WOFE) brought together the leading experts in electronics, reports on their latest research and advancement in microelectronics, this proceeding collected the best papers selected by the organization committeeIt provides the vision and road map as where microelectronics is headingsThis book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP — Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels. Contents:Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs (F Gámiz, C Sampedro, L Donetti and A Godoy)Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi-Ballistic Regime (R Clerc and G Ghibaudo)Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs (T A Fjeldly and U Monga)Compact Modeling of Double and Tri-Gate MOSFETs (B Iñiguez, R Ritzenthaler and F Lime) Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields. Key Features:This book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP – Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)Nanoscale Electron Devices started with a big bang but over the years there are still many challenges unsolved which prevent it from becoming mainstream. This book reignites the interests on research works on different modeling levels for nanoscale semiconductor devices, in particular different nanoscale MOS structures (Single- and Multi-Gate MOSFETs)The book is well written, and targeting at graduate students, faculty and researchers working in MOSFETsKeywords:Workshops on Frontiers in Electronics – WOFE;Carbon Nanotubes;Microelectronics;Nanoelectronics;MOSFETs

The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents:Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea)MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.)Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.)Materials for Strained Silicon Devices (P M Mooney)System-on-Chip Integration (R R Doering)Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.)Electrotextiles (E Ethridge & D Urban)System Impact of Silicon Carbide Power Devices (B Ozpineci et al.)Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.)Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.)Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.)Thermal Management in Optoelectronics (D K Johnstone)Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.)Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey)Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev)and other papers Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices. Keywords:Microelectronics;Nanoelectronics;Integrated Circuits;Nanostructures;Solid State Lighting;Semiconductors

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems. Contents: PrefaceScaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)Author Index Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.