Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2013 Wofe 2013

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression. The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 – November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz. This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics. Contents:Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission (S Albert, A Bengoechea-Encabo, M A Sanchez-García, F Barbagini, E Calleja, E Luna, A Trampert, U Jahn, P Lefebvre, L L López, S Estradé, J M Rebled, F Peiró, G Nataf, P de Mierry and J Zuñiga-Pérez)Catalyst-Free GaN Nanowires as Nanoscale Light Emitters (K Bertness, N Sanford, J Schlager, A Roshko, T Harvey, P Blanchard, M Brubaker, A Herrero and A Sanders)Recessed-Gate Normally-Off GaN MOSFET Technologies (K-S Im, K-W Kim, D-S Kim, H-S Kang, D-K Kim, S-J Chang, Y-H Bae, S-H Hahm, S Cristoloveanu and J-H Lee)Silicon-on-Insulator MESFETs at the 45nm Node (W Lepkowski, S J Wilk, M R Ghajar, A Parsi and T J Thornton)Advanced Concepts for Floating-Body Memories (F Gámiz, N Rodriguez and S Cristoloveanu)Plasmonic-Based Devices for Optical Communications (D K Mynbaev and V Sukharenko)Spintronic Devices and Circuits for Low-Voltage Logic (D H Morris, D M Bromberg, J-G (Jimmy) Zhu and L Pileggi)Biomolecular Field Effect Sensors (bioFETs): From Qualitative Sensing to Multiplexing, Calibration and Quantitative Detection from Whole Blood (A Vacic and M A Reed)Theoretical Investigation of Intraband, Infrared Absorbance in Inorganic/Organic Nanocomposite Thin Films with Varying Colloidal Quantum Dot Surface Ligand Materials (K R Lantz and A D Stiff-Roberts) Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields. Keywords:Workshops on Frontiers in Electronics — WOFE;Microelectronics;Nanoelectronics;OptoelectronicsKey Features:Workshop in Frontiers of Electronics (WOFE) brought together the leading experts in electronics, reports on their latest research and advancement in microelectronics, this proceeding collected the best papers selected by the organization committeeIt provides the vision and road map as where microelectronics is headingsThis book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP — Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems. Contents: PrefaceScaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)Author Index Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.

In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics. In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.

'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.