Spectral Sensing Research For Surface And Air Monitoring In Chemical Biological And Radiological Defense And Security Applications

This book provides unique perspectives on the state of the art in multispectral/hyperspectral techniques for early-warning monitoring against chemical, biological and radiological (CB&R) contamination of both surface (e.g. land) and air (e.g. atmospheric) environments through the presentation of a comprehensive survey of the novel spectroscopic methodologies and technologies that are emerging to address the CB&R defense and security challenges of the future. The technical content in this book lends itself to the non-traditional requirements for point and stand-off detection that have evolved out of the US joint services programs over many years. In particular, the scientific and technological work presented seeks to enable hyperspectral-based sensing and monitoring that is in real time and in-line; low in cost and labor requirements; and easy to support, maintain and use in military and security-relevant scenarios.

This book provides unique perspectives on both state-of-the-art hyperspectral techniques for the early-warning monitoring of water supplies against chemical, biological and radiological (CBR) contamination effects as well as the emerging spectroscopic science and technology base that will be used to support an array of CBR defense and security applications in the future. The technical content in this book lends itself to the non-traditional requirements for point and stand-off detection that have evolved out of the US joint services programs over many years. In particular, the scientific and technological work presented seeks to enable hyperspectral-based sensing and monitoring that is real-time; in-line; low in cost and labor; and easy to support, maintain and use in military- and security-relevant scenarios.

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international arena extended versions of selected, high impact talks. The papers are divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; wide band gap technology for high power and UV photonics. Contents:Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission (S Albert, A Bengoechea-Encabo, M A Sanchez-García, F Barbagini, E Calleja, E Luna, A Trampert, U Jahn, P Lefebvre, L L López, S Estradé, J M Rebled, F Peiró, G Nataf, P de Mierry and J Zuñiga-Pérez)Catalyst-Free GaN Nanowires as Nanoscale Light Emitters (K Bertness, N Sanford, J Schlager, A Roshko, T Harvey, P Blanchard, M Brubaker, A Herrero and A Sanders)Recessed-Gate Normally-Off GaN MOSFET Technologies (K-S Im, K-W Kim, D-S Kim, H-S Kang, D-K Kim, S-J Chang, Y-H Bae, S-H Hahm, S Cristoloveanu and J-H Lee)Silicon-on-Insulator MESFETs at the 45nm Node (W Lepkowski, S J Wilk, M R Ghajar, A Parsi and T J Thornton)Advanced Concepts for Floating-Body Memories (F Gámiz, N Rodriguez and S Cristoloveanu)Plasmonic-Based Devices for Optical Communications (D K Mynbaev and V Sukharenko)Spintronic Devices and Circuits for Low-Voltage Logic (D H Morris, D M Bromberg, J-G (Jimmy) Zhu and L Pileggi)Biomolecular Field Effect Sensors (bioFETs): From Qualitative Sensing to Multiplexing, Calibration and Quantitative Detection from Whole Blood (A Vacic and M A Reed)Theoretical Investigation of Intraband, Infrared Absorbance in Inorganic/Organic Nanocomposite Thin Films with Varying Colloidal Quantum Dot Surface Ligand Materials (K R Lantz and A D Stiff-Roberts) Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields. Keywords:Workshops on Frontiers in Electronics — WOFE;Microelectronics;Nanoelectronics;OptoelectronicsKey Features:Workshop in Frontiers of Electronics (WOFE) brought together the leading experts in electronics, reports on their latest research and advancement in microelectronics, this proceeding collected the best papers selected by the organization committeeIt provides the vision and road map as where microelectronics is headingsThis book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP — Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

This book brings together seven selected best papers presented at the 2014 Russia–Japan–USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17–21 June 2014. As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments. This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists. Contents:Terahertz Sensing Technology (M Shur)Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors (D M Yermolayev, E A Polushkin, S Yu Shapoval, V V Popov, K V Marem′yanin, V I Gavrilenko, N A Maleev, V M Ustinov, V E Zemlyakov, V I Yegorkin, V A Bespalov, A V Muravjov, S L Rumyantsev and M S Shur)Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications (D V Lavrukhin, A E Yachmenev, R R Galiev, A S Bugaev, Y V Fedorov, R A Khabibullin, D S Ponomarev and P P Maltsev)Peculiarity of Terahertz Waves Scattering (I N Dolganova, S O Yurchenko, V E Karasik and V P Budak)Rashba Effect and Beating Patterns in the THz Magneto-Photoresponse of a HgTe-Based Two-Dimensional Electron Gas (M Pakmehr, C Brüne, H Buhmann, L W Molenkamp and B D McCombe)Characterization of High Mobility InAlAs/InGaAs/InAlAs Composite Channels by THz Magneto-Photoresponse Spectroscopy (M Pakmehr, B D McCombe, O Chiatti, S F Fischer, Ch Heyn and W Hansen)Quantum Dot Solar Cells with Nanoscale Barriers Around Dots: Experiment and Two-Diode Model Analysis (Y Li, A Sergeev, N Vagidov, V Mitin and K Sablon) Readership: Scientists, engineers and researchers interested in terahertz materials, devices, systems and applications, as well as graduate students working on terahertz science and technology. Keywords:Terahertz Devices and Technologies;Terahertz Radiation;Micro-and Nanostructures;Emitters and Sensors