Ulsi Process Integration Iii

ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.